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ZVN2110GTC

Part No ZVN2110GTC
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 500MA SOT223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 2.4V @ 1mA
Max Input Capacitance 75pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 4 Ohm @ 1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 1120299-ZVN2110GTC
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian ZVN2110GTC CAD Model

Description

Introducing the ZVN2110GTC MOSFET by Diodes Incorporated

Diodes Incorporated, a leading manufacturer in the semiconductor market, presents the ZVN2110GTC, a high-performance N-Channel Enhancement Mode Vertical DMOS FET. This MOSFET is designed for those who need a reliable and efficient component for their electronic applications. The ZVN2110GTC is a testament to Diodes Incorporated's commitment to providing innovative solutions that meet the evolving needs of the electronics industry.

Key Features of the ZVN2110GTC

  • Device Type: The ZVN2110GTC is an N-Channel MOSFET, which means it is optimized for fast switching with a positive gate voltage.
  • High Breakdown Voltage: With a drain-source breakdown voltage of 100V, this MOSFET can handle high voltage applications with ease, ensuring robust performance for a wide range of uses.
  • Continuous Drain Current: It offers a continuous drain current of 0.9A, providing sufficient current handling capability for numerous applications.
  • Low On-Resistance: The device boasts a low on-resistance of 5 Ohms, which minimizes power loss and improves overall efficiency.
  • Power Dissipation: With a power dissipation of 1W, the ZVN2110GTC is capable of handling moderate power levels, making it suitable for a variety of power management tasks.
  • TO-92 Package: Enclosed in a TO-92 package, the ZVN2110GTC is designed for through-hole mounting, which is ideal for prototyping and applications where surface-mount technology is not preferred.

Applications

The ZVN2110GTC is versatile and can be used in a range of applications, including:

  • Relay drivers
  • DC-DC converters
  • Power management functions
  • Motor control circuits
  • Load switching

Whether you're designing power supplies, motor controllers, or looking to switch high voltage loads, the ZVN2110GTC offers a reliable solution that combines efficiency with robust performance.

Why Choose the ZVN2110GTC?

Opting for the ZVN2110GTC from Diodes Incorporated means you're choosing a component that is backed by a leader in the semiconductor industry. You can expect a product that delivers consistent performance, longevity, and is designed with the latest technology in mind. For your next project that demands a high-quality N-Channel MOSFET, consider the ZVN2110GTC for its exceptional features and proven reliability.

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