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ZXM61P02FTC

Part No ZXM61P02FTC
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 0.9A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 3.5nC @ 4.5V
Max Input Capacitance 150pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 625mW (Ta)
Maximum Rds On at Id,Vgs 600 mOhm @ 610mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1120363-ZXM61P02FTC
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian ZXM61P02FTC CAD Model

Description

Product Overview: ZXM61P02FTC from Diodes Incorporated

The ZXM61P02FTC is a high-performance P-channel enhancement mode MOSFET produced by Diodes Incorporated, a leading manufacturer in the semiconductor industry. This MOSFET is designed to deliver efficient power management and switching with a focus on miniaturization, making it ideal for a wide array of applications.

Key Features

  • Low On-Resistance: The device offers a low on-resistance of typically 70mΩ at Vgs = -4.5V, ensuring efficient operation with minimal power loss.
  • High Power Dissipation: With a power dissipation of 1.25W, this MOSFET can handle significant power, making it suitable for various high-power applications.
  • Advanced Packaging: Housed in a compact SOT-23 package, the ZXM61P02FTC is designed for space-constrained applications without compromising performance.
  • Voltage Rating: It can handle a drain-source voltage of -20V, providing a wide operating range for diverse electronic circuits.
  • Gate Threshold Voltage: The gate threshold voltage is specified at a minimum of -0.5V, allowing for low voltage operation and control.

Applications

The versatility of the ZXM61P02FTC makes it an excellent choice for a variety of applications, including:

  • Power management in portable and battery-powered devices.
  • Load switch circuits where efficient power control is essential.
  • DC/DC converters where size and efficiency are critical.
  • Motor control circuits in consumer electronics.
  • High-speed switching applications in telecommunication devices.

Quality and Reliability

Diodes Incorporated is known for its commitment to quality, and the ZXM61P02FTC is no exception. This MOSFET is built with high-quality materials and is rigorously tested to ensure reliability and longevity in the field. Whether used in commercial or industrial applications, the ZXM61P02FTC is designed to meet the stringent requirements of electronic device manufacturers worldwide.

In conclusion, the ZXM61P02FTC from Diodes Incorporated is a robust, efficient, and versatile P-channel MOSFET that offers superior performance in a wide range of applications. Its compact footprint, combined with its powerful features, makes it an excellent choice for designers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
235+ $0.2460 $57.8100
575+ $0.2019 $116.0925
890+ $0.1957 $174.1730
1,225+ $0.1893 $231.8925
1,580+ $0.1830 $289.1400
2,115+ $0.1640 $346.8600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 126,700 pieces
MOQ: 235 pcs
Order Increment : 1 pcs
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