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ZXMN10B08E6TA

Part No ZXMN10B08E6TA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 1.6A SOT23-6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.3V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 9.2nC @ 10V
Max Input Capacitance 497pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.1W (Ta)
Maximum Rds On at Id,Vgs 230 mOhm @ 1.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-26
Dimension SOT-23-6
Win Source Part Number 092097-ZXMN10B08E6TA
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZXMN10B08E6TA CAD Model

Description

Product Overview: ZXMN10B08E6TA - Diodes Incorporated

The ZXMN10B08E6TA is a high-performance, energy-efficient MOSFET brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor market. This product is part of their extensive range of MOSFETs designed for various applications that require fast switching, low on-resistance, and minimal power loss.

Key Features

  • Low On-Resistance: The ZXMN10B08E6TA boasts an exceptionally low on-resistance, which translates to reduced conduction losses and improved overall efficiency in applications.
  • High-Speed Switching: Engineered for high-speed switching, this MOSFET can handle fast-paced operations, making it ideal for power management and conversion systems.
  • Enhanced Power Density: With its compact footprint, the ZXMN10B08E6TA offers enhanced power density, providing more power in a smaller package.
  • Thermal Performance: The device is encapsulated in a thermally efficient package that ensures reliable operation even under high-temperature conditions.

Applications

The ZXMN10B08E6TA is well-suited for a variety of applications, including:

  • Power supply circuits
  • DC-DC converters
  • Motor control systems
  • Load switches
  • Battery management systems

Technical Specifications

The MOSFET operates with a continuous drain current of up to 4.2A and has a drain-source voltage (Vds) of 100V, which ensures that it can handle significant voltage without compromise. The gate threshold voltage (Vgs th) is specified at a typical value of 2.0V, allowing for low-voltage operation.

Package Information

The ZXMN10B08E6TA comes in a small and robust SOT-23 package, which is not only space-saving but also rugged, making it suitable for high-density board designs and harsh environments.

Quality and Reliability

Diodes Incorporated is committed to delivering products of the highest quality. The ZXMN10B08E6TA MOSFET is produced with stringent quality control measures and is designed to meet or exceed industry standards for reliability and performance.

With its combination of efficiency, durability, and performance, the ZXMN10B08E6TA from Diodes Incorporated stands out as a superior choice for designers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.2933 $51.3275
420+ $0.2407 $101.0940
645+ $0.2331 $150.3495
890+ $0.2256 $200.7840
1,150+ $0.2181 $250.8150
1,535+ $0.1955 $300.0925
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,586 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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