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Same model may have multiple batches, images only for reference.
FCPF190N60E Real Image
Same model may have multiple batches, images only for reference.

FCPF190N60E

Part No FCPF190N60E
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V TO-220-3
Datasheet
FCPF190N60E Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 20.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 250μA
Max Gate Charge 82nC @ 10V
Max Input Capacitance 3175pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 39W (Tc)
Maximum Rds On at Id,Vgs 190 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220F-3
Dimension TO-220-3 Full Pack
Win Source Part Number 1037905-FCPF190N60E
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian FCPF190N60E CAD Model

Description

The Fairchild/ON Semiconductor 432883 is an N-channel MOSFET with a drain-source breakdown voltage of 600V and a continuous drain current @ 25°C of 20.6A (Tc).

  • Mounting Type: Through Hole
  • Case/Package: TO-220F-3
  • Maximum Power Dissipation: 39W (Tc)
  • Gate-Source Threshold Voltage: 3.5V @ 250μA
  • Maximum Gate Charge: 82nC @ 10V
  • Maximum Rds On @ Id,Vgs: 190 mOhm @ 10A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 3175pF @ 25V

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54+ $2.1518 $116.1972
84+ $2.0848 $175.1232
115+ $2.0166 $231.9090
149+ $1.9496 $290.4904
199+ $1.7487 $347.9913
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Availability: 6,000 pieces
MOQ: 23 pcs
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