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FDD86102LZ

Part No FDD86102LZ
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 8A DPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 8A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 26nC @ 10V
Max Input Capacitance 1540pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta), 54W (Tc)
Maximum Rds On at Id,Vgs 22.5 mOhm @ 8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 132414-FDD86102LZ
Popularity Medium
Supply and Demand Status Limited
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian FDD86102LZ CAD Model

Description

FDD86102LZ MOSFET Description

The FDD86102LZ is an advanced MOSFET, offering superior efficiency and low thermal resistance. Designed for demanding applications, it is suitable for energy-efficient circuits.

  • Applications:
    • Smart grid technology
    • Renewable energy systems
    • Automotive electronics
    • Inverter circuits
  • Features and Benefits:
    • Enhanced energy efficiency
    • Advanced thermal management
    • Improved system reliability
    • Environment-friendly design
  • Additional Details:
    • Lead-free and RoHS compliant
    • Compact design suitable for modern compact circuits

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5662 $50.9580
220+ $0.4646 $102.2120
335+ $0.4500 $150.7500
460+ $0.4355 $200.3300
595+ $0.4210 $250.4950
795+ $0.3775 $300.1125
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 196,486 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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Shipping Information

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