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Same model may have multiple batches, images only for reference.
FDD86252 Real Image
Same model may have multiple batches, images only for reference.

FDD86252

Part No FDD86252
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 150V 5A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 150V 5A DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 5A (Ta), 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 16nC @ 10V
Max Input Capacitance 985pF @ 75V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta), 89W (Tc)
Maximum Rds On at Id,Vgs 52 mOhm @ 5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-PAK (TO-252AA)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1038122-FDD86252
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Quantity per package 2,500
Family Name FDD86252
Introduction Date September 20, 2011
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian FDD86252 CAD Model

Description

The FDD86252 is an N-channel MOSFET designed for use in a variety of applications from Fairchild/ON Semiconductor.

  • Drain-Source Breakdown Voltage (Max): 150V
  • Continuous Drain Current: 5A (Ta), 27A (Tc)
  • On-Resistance: 52 mOhm @ 5A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Gate Charge (Max): 16nC @ 10V
  • Package: D-PAK (TO-252AA)
  • Operating Temperature: -55°C to 150°C
  • Popularity: Common

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Quantity Unit Price Ext. Price
55+ $0.9334 $51.3370
115+ $0.8732 $100.4180
180+ $0.8431 $151.7580
260+ $0.7829 $203.5540
335+ $0.7528 $252.1880
420+ $0.7227 $303.5340
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