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Same model may have multiple batches, images only for reference.
FDMS3602AS Real Image
Same model may have multiple batches, images only for reference.

FDMS3602AS

Part No FDMS3602AS
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 25V 15A/26A POWER56
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual) Asymmetrical
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 15A, 26A
Maximum Rds On at Id,Vgs 5.6 mOhm @ 15A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 1770pF @ 13V
Maximum Power Dissipation 2.2W, 2.5W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Power56
Win Source Part Number 143330-FDMS3602AS
Popularity Medium
Supply and Demand Status Limited
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian FDMS3602AS CAD Model

Description

The FDMS3602AS from Fairchild/ON Semiconductor is a 2 N-Channel (Dual) Asymmetrical FET with a Logic Level Gate.

  • Temperature Range: -55°C to 150°C (TJ)
  • Package: Power56
  • Power Dissipation: 2.2W, 2.5W
  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current: 15A, 26A @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Gate Charge (Max): 27nC @ 10V
  • Input Capacitance (Max): 1770pF @ 13V
  • Rds On (Max): 5.6 mOhm @ 15A, 10V

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Quantity Unit Price Ext. Price
40+ $1.2545 $50.1800
100+ $1.0294 $102.9400
155+ $0.9972 $154.5660
210+ $0.9650 $202.6500
270+ $0.9329 $251.8830
360+ $0.8364 $301.1040
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