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Same model may have multiple batches, images only for reference.
FDP5645 Real Image
Same model may have multiple batches, images only for reference.

FDP5645

Part No FDP5645
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 80A TO-220
Datasheet
FDP5645 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 80A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 107nC @ 10V
Max Input Capacitance 4468pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 9.5 mOhm @ 40A, 10V
Temperature Range - Operating -65°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 204118-FDP5645
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FDP5645 CAD Model

Description

The Fairchild/ON Semiconductor 204118-FDP5645 is an N-Channel MOSFET Technology IC.

  • Package: TO-220-3
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current at 25°C: 80A (Ta)
  • Temperature Range: -65°C to 175°C (TJ)
  • Maximum Rds On at Id,Vgs: 9.5 mOhm @ 40A, 10V
  • Popularity: Medium
  • Supply and Demand Status: Limited
  • Status: Obsolete (EOL)

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