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FDS5170N7

Part No FDS5170N7
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 60V N-Channel PowerTrench  MOSFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Series PowerTrench
Packaging Reel - TR
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 60V
Current - Continuous Drain (Id) @ 25°C 10.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 71nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2889pF @ 30V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 3W (Ta)
Rds On (Maximum) @ Id, Vgs 12 mOhm @ 10.6A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package 8-SO
Package 8-SOIC (0.154", 3.90mm Width)
RoHS State Request Verification
Win Source Part Number 1173900-FDS5170N7
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Family Name FDS5170N7
Introduction Date September 06, 2002
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian FDS5170N7 CAD Model

Description

The Fairchild/ON Semiconductor FDS5170N7 is an N-Channel MOSFET with a drain source voltage of 60V and a continuous drain current of 10.6A (Ta).

  • Drain Source Voltage: 60V
  • Continuous Drain Current: 10.6A (Ta)
  • Rds On (Maximum) @ Id, Vgs: 12 mOhm @ 10.6A, 10V
  • Vgs(th) (Maximum) @ Id: 4V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 71nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 2889pF @ 30V
  • Vgs (Maximum): ±20V
  • Power Dissipation (Maximum): 3W (Ta)

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