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FDS5690

Part No FDS5690
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 7A 8SOIC
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 32nC @ 10V
Max Input Capacitance 1107pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 28 mOhm @ 7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 016150-FDS5690
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian FDS5690 CAD Model

Description

This MOSFET electronic component is manufactured by Fairchild/ON Semiconductor and has a medium popularity.

  • Maximum Power Dissipation: 2.5W
  • Drain-Source Breakdown Voltage: 60V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 28 mOhm @ 7A, 10V
  • Package Quantity: 2,500 units

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9407 $51.7385
130+ $0.7719 $100.3470
205+ $0.7478 $153.2990
280+ $0.7237 $202.6360
360+ $0.6995 $251.8200
480+ $0.6272 $301.0560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,500 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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