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FDS6670AS

Part No FDS6670AS
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 13.5A 8SOIC
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 13.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 1mA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 1540pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 9 mOhm @ 13.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 016159-FDS6670AS
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Industrial
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian FDS6670AS CAD Model

Description

The FDS6670AS is an N-channel MOSFET transistor manufactured by Fairchild/ON Semiconductor. It is designed for use in various electronic devices that require a high-speed switching transistor.

  • Drain-Source Voltage (Max): 30V
  • Continuous Drain Current (Max): 13.5A
  • Package: 8-SOIC
  • Applications: Power management and industrial fields

The FDS6670AS is a reliable and high-performance MOSFET transistor that is suitable for a wide range of applications in power management and industrial fields.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7435 $52.0450
145+ $0.6965 $100.9925
225+ $0.6730 $151.4250
320+ $0.6259 $200.2880
420+ $0.6024 $253.0080
520+ $0.5789 $301.0280
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,000 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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