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FDS6673BZ

Part No FDS6673BZ
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 14.5A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 14.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 124nC @ 10V
Max Input Capacitance 4700pF @ 15V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 7.8 mOhm @ 14.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 016160-FDS6673BZ
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian FDS6673BZ CAD Model

Description

The FDS6673BZ is a P-channel MOSFET from Fairchild/ON Semiconductor with a Win Source Part Number of 016160-FDS6673BZ. It is an active product with medium popularity and balanced supply and demand.

  • Mounting Type: SMD (SMT)
  • Power Dissipation: 2.5W (Ta)
  • Drive Voltage: 4.5V, 10V
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 14.5A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Gate-Source Voltage (Maximum): ±25V
  • Rds On (Maximum): 7.8 mOhm @ 14.5A, 10V
  • Package: 8-SO (8-SOIC (0.154", 3.90mm Width))
  • Quantity per Package: 2,500

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7518 $52.6260
165+ $0.6169 $101.7885
255+ $0.5976 $152.3880
350+ $0.5783 $202.4050
450+ $0.5591 $251.5950
600+ $0.5012 $300.7200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,913 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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Shipping Information

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