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Same model may have multiple batches, images only for reference.
FDS6679Z Real Image
Same model may have multiple batches, images only for reference.

FDS6679Z

Part No FDS6679Z
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 13A 8SOIC
Datasheet
FDS6679Z Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 94nC @ 10V
Max Input Capacitance 3803pF @ 15V
Maximum Gate-Source Voltage +20V, -25V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 9 mOhm @ 13A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 067089-FDS6679Z
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDS6679Z CAD Model

Description

The Fairchild/ON Semiconductor FDS6679Z is an obsolete (EOL) P-channel power MOSFET designed for use in power management and industrial applications.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 13A @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Gate Charge (Max): 94nC @ 10V
  • Package: 8-SOIC (0.154", 3.90mm Width)
  • Mounting: SMD (SMT) technology
  • Popularity: Medium
  • Supply and Demand: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
250+ $0.2356 $58.9000
600+ $0.1940 $116.4000
930+ $0.1871 $174.0030
1,275+ $0.1813 $231.1575
1,645+ $0.1756 $288.8620
2,210+ $0.1571 $347.1910
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Availability: 19,000 pieces
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