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Same model may have multiple batches, images only for reference.
FDS6692A Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FDS6692A

Part No FDS6692A
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 9A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 29nC @ 10V
Max Input Capacitance 1610pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.47W (Ta)
Maximum Rds On at Id,Vgs 11.5 mOhm @ 9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 016169-FDS6692A
Popularity Medium
Supply and Demand Status Limited
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian FDS6692A CAD Model

Description

The FDS6692A is an N-Channel MOSFET manufactured by Fairchild/ON Semiconductor.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 9A
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 11.5 mOhm @ 9A, 10V
  • Package: 8-SO
  • Supply and Demand: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.5518 $57.9390
260+ $0.4528 $117.7280
395+ $0.4387 $173.2865
545+ $0.4245 $231.3525
705+ $0.4104 $289.3320
945+ $0.3679 $347.6655
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Availability: 1,413 pieces
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