The FDT434P MOSFET from Fairchild/ON Semiconductor is a P-Channel power MOSFET that is commonly used in power management, alternative energy, and motor drive & control applications. It has a maximum drain-source breakdown voltage of 20V and a continuous drain current of 6A at 25°C. The maximum Rds On at Id,Vgs is 50 mOhm at 6A and 4.5V, with a maximum gate-source voltage of ±8V. The gate-source threshold voltage is 1V at 250μA, with a max gate charge of 19nC at 4.5V and a max input capacitance of 1187pF at 10V. The FDT434P is packaged in a SOT-223-4 case and is available in reel - TR packaging. The operating temperature range is -55°C to 150°C (TJ). This product is compliant with halogen-free requirements.