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Same model may have multiple batches, images only for reference.
FQB1N60TM Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQB1N60TM

Part No FQB1N60TM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 1.2A D2PAK
Datasheet
FQB1N60TM Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 1.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 6nC @ 10V
Max Input Capacitance 150pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 3.13W (Ta), 40W (Tc)
Maximum Rds On at Id,Vgs 11.5 Ohm @ 600mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1039614-FQB1N60TM
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQB1N60TM CAD Model

Description

The Fairchild/ON Semiconductor FQB1N60TM is an N-channel MOSFET transistor with a drain-source breakdown voltage of 600V and a continuous drain current of 1.2A @ 25°C.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 1.2A @ 25°C
  • Maximum Rds On: 11.5 Ohm @ 600mA and 10V
  • Power Dissipation: 3.13W (Ta) and 40W (Tc)
  • Operating Temperature: -55°C to 150°C (TJ)
  • Package: D2PAK (TO-263AB)
  • Maximum Gate-Source Voltage: ±30V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 6nC @ 10V
  • Maximum Input Capacitance: 150pF @ 25V

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