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FQB27P06TM

Part No FQB27P06TM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 27A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 43nC @ 10V
Max Input Capacitance 1400pF @ 25V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 3.75W (Ta), 120W (Tc)
Maximum Rds On at Id,Vgs 70 mOhm @ 13.5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 016420-FQB27P06TM
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Application Field Used in Power Management, Lighting, Audio, Motor Drive & Control
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian FQB27P06TM CAD Model

Description

The FQB27P06TM is a P-channel MOSFET designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 3.75W (Ta), 120W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 27A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 43nC @ 10V
  • Package: D2PAK (TO-263AB)
  • Mounting: Reel
  • Popularity: High
  • Applications: Power Management, Lighting, Audio, Motor Drive and Control

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.2433 $55.9485
90+ $1.1646 $104.8140
135+ $1.1253 $151.9155
195+ $1.0466 $204.0870
250+ $1.0073 $251.8250
310+ $0.9679 $300.0490
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,052 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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Shipping Information

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