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Same model may have multiple batches, images only for reference.
FQB5N50CTM Real Image
Same model may have multiple batches, images only for reference.

FQB5N50CTM

Part No FQB5N50CTM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 5A A.D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 24nC @ 10V
Max Input Capacitance 625pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 73W (Tc)
Maximum Rds On at Id,Vgs 1.4 Ohm @ 2.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 125322-FQB5N50CTM
Popularity Medium
Supply and Demand Status Balance
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian FQB5N50CTM CAD Model

Description

The Fairchild/ON Semiconductor FQB5N50CTM is an N-channel MOSFET transistor.

  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 5A @ 25°C
  • Package: D2PAK (TO-263AB)
  • Mounting Technology: Surface Mount Technology (SMT)
  • Maximum Power Dissipation: 73W (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On: 1.4 Ohm @ 2.5A, 10V
  • Category: Discrete Semiconductor Product
  • Supply and Demand: Balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $8.7588 $61.3116
17+ $7.1866 $122.1722
25+ $6.9621 $174.0525
35+ $6.7376 $235.8160
45+ $6.5130 $293.0850
60+ $5.8392 $350.3520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 382 pieces
MOQ: 7 pcs
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