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Same model may have multiple batches, images only for reference.
FQD3N30TF Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQD3N30TF

Part No FQD3N30TF
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 300V 2.4A DPAK
Datasheet
FQD3N30TF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 300V
Continuous Drain Current at 25°C 2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 7nC @ 10V
Max Input Capacitance 230pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 30W (Tc)
Maximum Rds On at Id,Vgs 2.2 Ohm @ 1.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1039735-FQD3N30TF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2k pcs
Ultra Librarian 3D Model Ultra Librarian FQD3N30TF CAD Model

Description

The Fairchild/ON Semiconductor FQD3N30TF is a high-quality surface mount MOSFET designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 2.5W (Ta), 30W (Tc)
  • Continuous Drain Current: up to 2.4A (Tc)
  • Drain-Source Breakdown Voltage: 300V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Package: D-Pak package
  • Supplied on: a reel for easy handling
  • Commonly used in: discrete semiconductor products
  • Supply and Demand Status: balanced

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