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Same model may have multiple batches, images only for reference.
FQD6N60CTM_WS Real Image
Same model may have multiple batches, images only for reference.

FQD6N60CTM_WS

Part No FQD6N60CTM_WS
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V DPAK
Datasheet
FQD6N60CTM_WS Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 810pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 80W (Tc)
Maximum Rds On at Id,Vgs 2 Ohm @ 2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 111480-FQD6N60CTM_WS
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQD6N60CTM_WS CAD Model

Description

The Fairchild/ON Semiconductor FQD6N60CTM_WS is an N-channel MOSFET.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current (Tc=25°C): 4A
  • Gate-Source Threshold Voltage (Id=250μA): 4V
  • Maximum Gate Charge (Vgs=10V): 20nC
  • Maximum Input Capacitance (Vds=25V): 810pF
  • Maximum Rds On (Id=2A, Vgs=10V): 2 Ohm
  • Package: D-Pak (TO-252-3, DPak (2 Leads + Tab), SC-63)
  • Application: Discrete Semiconductor Products
  • Temperature Range: -55°C to 150°C
  • Lifecycle Status: Not for New Designs
  • Popularity Level: Medium

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