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Same model may have multiple batches, images only for reference.
IRFR224BTM_TC002 Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

IRFR224BTM_TC002

Part No IRFR224BTM_TC002
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 3.8A DPAK
Datasheet
IRFR224BTM_TC002 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 18nC @ 10V
Max Input Capacitance 450pF @ 25V
Maximum Gate-Source Voltage ±30V
Maximum Rds On at Id,Vgs 1.1 Ohm @ 1.9A, 10V
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047029-IRFR224BTM_TC002
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFR224BTM_TC002 CAD Model

Description

The Fairchild/ON Semiconductor 1047029-IRFR224BTM_TC002 is an N-channel MOSFET in D-Pak package.

  • Mounting: SMD(SMT)
  • Category: Discrete semiconductor products
  • Drive Voltage (max Rds On, min Rds On): 10V
  • Status: Obsolete(EOL)
  • Drain-Source Breakdown Voltage: 250V
  • Continuous Drain Current @ 25°C: 3.8A (Tc)
  • Maximum Gate Charge: 18nC @ 10V
  • Maximum Input Capacitance: 450pF @ 25V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On @ Id, Vgs: 1.1 Ohm @ 1.9A, 10V
  • Supply and Demand Status: Sufficient

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21+ $8.6059 $180.7239
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49+ $7.2176 $353.6624
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