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Same model may have multiple batches, images only for reference.
NDH8301N
Same model may have multiple batches, images only for reference.

NDH8301N

Part No NDH8301N
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description Not available to order DISC BY MFG 2/02
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 3 A
Drain to Source Breakdown Voltage 20 V
Fall Time 25 ns
Gate to Source Voltage (Vgs) 8 V
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Number of Pins 8
Power Dissipation 800 mW
Rise Time 25 ns
RoHS Non-Compliant
Turn-Off Delay Time 30 ns
Win Source Part Number 1115283-NDH8301N
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Fairchild/ON Semiconductor
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NDH8301N CAD Model

Description

The H8301N is a medium-popularity RF MOSFET transistor from Fairchild/ON Semiconductor.

  • Application: High-Frequency RF Applications (RF amplifiers, mixers, and oscillators)
  • RoHS Status: Non-compliant
  • Package: 8-pin DIP
  • Continuous Drain Current: 3A
  • Drain-to-Source Breakdown Voltage: 20V
  • Popularity: Medium

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