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2SK2762

Part No 2SK2762
Manufacturer Fuji Electric
Catalog Hard To Find
Description Power MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

RoHS State Request Verification
Manufacturer Fuji Electric
Win Source Part Number 1127370-2SK2762
Manufacturer Homepage www.fujielectric.co.jp/eng/fdt/scd
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SK2762 CAD Model

Description

The 2SK2762 is an N-channel power MOSFET produced by Fuji Electric. It's designed for high-efficiency switching applications and is commonly used in various power electronics circuits. This MOSFET is recognized for its low on-resistance and fast switching speed, making it suitable for demanding power control systems.

Applications:

  • Switching Power Supplies
  • DC-DC Converters
  • AC Adapters
  • Uninterruptible Power Supplies (UPS)
  • Motor Control

Features:

  • N-Channel MOSFET
  • Low On-Resistance: Reduces conduction losses and improves efficiency.
  • High-Speed Switching: Enables faster switching speeds for better performance.
  • High Avalanche Capability: Offers robust performance under inductive load conditions.
  • Isolated Package: Facilitates thermal management and provides electrical isolation.
  • High Drain Current: Supports applications requiring significant current handling capability.

Benefits:

  • Increased Efficiency: Low on-resistance minimizes power dissipation, leading to higher energy efficiency.
  • Reliable Performance: High avalanche capability ensures stable operation under transient conditions.
  • Fast Switching: High-speed switching capability allows for efficient power conversion.
  • Simplified Thermal Design: Isolated package simplifies heat dissipation and reduces the need for complex cooling solutions.
  • Robust Design: Designed to withstand high voltage and current stresses, providing long-term reliability.

Additional Details:

The 2SK2762 is typically packaged in a TO-220 or similar format. Key specifications include drain-source voltage (Vds), gate-source voltage (Vgs), drain current (Id), and on-resistance (Rds(on)). Consulting the device datasheet is essential to ensure proper application and optimal performance. Proper heat sinking is critical to maintain the junction temperature within the specified limits, which helps to prevent device failure and ensures longevity. The MOSFET is designed to operate within specific temperature ranges, and exceeding these limits can compromise its performance.

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