FMV23N50E

Part No FMV23N50E
Manufacturer Fuji Electric
Catalog Transistors - FETs, MOSFETs - RF
Description IC; Mosfet; N-channel; FAP-E3 Planar; 500V; 23A; 130W; TO-220F(SLS)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Drain to Source Breakdown Voltage 500 V
Drain to Source Resistance 245 mΩ
Element Configuration Single
Gate to Source Voltage (Vgs) 30 V
Height 15.0114 mm
Length 9.9822 mm
Maximum Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Through Hole
Number of Pins 3
Power Dissipation 130 W
RoHS Compliant
Turn-Off Delay Time 150 ns
Turn-On Delay Time 26 ns
Width 4.4958 mm
Win Source Part Number 1004278-FMV23N50E
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Fuji Electric
Popularity Low
Supply and Demand Status Shortage
Win Source Part Number STW10N95K5;  STP10N95K5;  FQP4N80;  FQP3N90;  IRF840APBF;  IRFB9N65APBF;  

Description

The Fuji Electric FMV23N50E is a Single MOSFET that has a maximum operating temperature of 150 °C and a minimum operating temperature of -55 °C. It has a turn-on delay time of 26 ns and a turn-off delay time of 150 ns. The drain to source breakdown voltage is 500 V and the drain to source resistance is 245 mΩ. The MOSFET has a gate to source voltage (Vgs) of 30 V and is mounted through hole. It has a length of 9.9822 mm, a width of 4.4958 mm, and a height of 15.0114 mm. The MOSFET is part of the Transistors - FETs, MOSFETs - RF category and has a popularity of low. The supply and demand status is shortage. The MOSFET is compliant with RoHS.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
45+ $1.1310 $50.8950
110+ $0.9280 $102.0800
170+ $0.8990 $152.8300
230+ $0.8700 $200.1000
300+ $0.8410 $252.3000
400+ $0.7540 $301.6000
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 370 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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