The 1340036-GT025N06AM6 is a N-channel MOSFET transistor from Goford Semiconductor that features a drain to source voltage (Vdss) of 60V and a power dissipation (Max) of 215W (Tc).

• Vdss Drain to Source Voltage: 60V
• Power Dissipation (Max): 215W (Tc)
• Mounting Type: Surface Mount
• Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
• Vgs (Max): ±20V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 5058 pF @ 30 V
• Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250μA
• Device Category: Discrete Semiconductor Products - Transistors, FETs, MOSFETs