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IRF520

Name: IRF520
Brand: Harris Corporation
SKU: 159550
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	IRF520
Manufacturer	Harris Corporation
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 100V 9.2A TO220AB
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	Harris Corporation
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	9.2A (Tc)
Rds On (Max) @ Id, Vgs	270mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	350 pF @ 25 V
Power Dissipation (Max)	60W (Tc)
Temperature Range - Operating	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3
Standard Package	1 pcs
MSL Level	1 (Unlimited)
REACH Status	Vendor Undefined
ECCN	EAR99
HTSUS	0000.00.0000
Win Source Part Number	159550-IRF520
Ultra Librarian 3D Model	Ultra Librarian IRF520 CAD Model

Alternative Products

Description

The IRF520 is a single N-Channel MOSFET transistor designed for high-speed switching applications.

Drain-to-Source Voltage: 100V
Continuous Drain Current: 9.2A @ 25°C
Maximum On-Resistance: 270mOhm @ 5.6A and 10V gate-source voltage
Package: TO-220-3
Mounting: Through-hole
Commonly used in: discrete semiconductor applications that require high power dissipation and low on-resistance

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
115+	$0.5198	$59.7770
240+	$0.4863	$116.7120
370+	$0.4689	$173.4930
535+	$0.4354	$232.9390
690+	$0.4193	$289.3170
865+	$0.4019	$347.6435

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 41,000 pieces

MOQ: 95 pcs

Order Increment : 1 pcs

Qty:

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