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Same model may have multiple batches, images only for reference.
IRF520 Real Image
Same model may have multiple batches, images only for reference.

IRF520

Part No IRF520
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 9.2A TO220AB
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 9.2A (Tc)
Rds On (Max) @ Id, Vgs 270mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 25 V
Power Dissipation (Max) 60W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 0000.00.0000
Win Source Part Number 159550-IRF520
Ultra Librarian 3D Model Ultra Librarian IRF520 CAD Model

Description

The IRF520 is a single N-Channel MOSFET transistor designed for high-speed switching applications.

  • Drain-to-Source Voltage: 100V
  • Continuous Drain Current: 9.2A @ 25°C
  • Maximum On-Resistance: 270mOhm @ 5.6A and 10V gate-source voltage
  • Package: TO-220-3
  • Mounting: Through-hole
  • Commonly used in: discrete semiconductor applications that require high power dissipation and low on-resistance

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5198 $59.7770
240+ $0.4863 $116.7120
370+ $0.4689 $173.4930
535+ $0.4354 $232.9390
690+ $0.4193 $289.3170
865+ $0.4019 $347.6435
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 41,000 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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