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IRF523

Part No IRF523
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 360mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 25 V
Power Dissipation (Max) 60W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 604352-IRF523
Ultra Librarian 3D Model Ultra Librarian IRF523 CAD Model

Description

The Harris Corporation IRF523 is a single N-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) designed for discrete semiconductor applications.

  • Package: Bulk
  • Standard Package Quantity: 1
  • Vdss (Drain-to-Source Voltage): 80V
  • Id (Continuous Drain Current) @ 25°C: 8A
  • Rds On (On-Resistance) @ Vgs, Id: 360mOhm @ 5.6A, 10V
  • Operating Temperature: -55°C to 175°C
  • Manufacturer: Harris Corporation
  • ECCN: EAR99
  • Status: Active
  • MSL Level: 1 (Unlimited)
  • REACH Status: Vendor Undefined
  • HTSUS Code: 8541.29.0095

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.5793 $57.9300
245+ $0.4754 $116.4730
380+ $0.4606 $175.0280
520+ $0.4458 $231.8160
675+ $0.4308 $290.7900
900+ $0.3862 $347.5800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 29,000 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?

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