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IRF731

Part No IRF731
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 350 V
Current - Continuous Drain (Id) @ 25°C 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 25 V
Power Dissipation (Max) 75W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Standard Package 202 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 604513-IRF731
Ultra Librarian 3D Model Ultra Librarian IRF731 CAD Model

Description

The 604513-IRF731 is a single N-channel MOSFET transistor used in discrete semiconductor products. It has a drain to source voltage (Vdss) of 350V and a continuous drain current (Id) of 5.5A @ 25°C.

  • Drain to Source Voltage (Vdss): 350V
  • Continuous Drain Current (Id): 5.5A @ 25°C
  • Rds On (Max): 1Ohm @ 3A and 10V
  • Mounting Type: Through-hole
  • Package: Bulk
  • Standard Package: 202 pieces
  • Gate Charge (Qg): 35nC @ 10V
  • Input Capacitance (Ciss): 600pF @ 25V
  • Operating Temperature: -55°C to 150°C
  • Product Status: Active
  • Manufacturer: Harris Corporation

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.7739 $58.0425
185+ $0.6353 $117.5305
285+ $0.6156 $175.4460
390+ $0.5948 $231.9720
505+ $0.5752 $290.4760
675+ $0.5163 $348.5025
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 19,000 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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