The BFP182E7765 is a high-performance NPN silicon bipolar RF transistor manufactured by Infineon Technologies. This transistor is specifically designed for low-noise and high-gain amplification in various radio frequency (RF) applications. Its excellent performance characteristics make it suitable for use in communication systems, radar, and other high-frequency circuits.

Applications

• Low Noise Amplifiers (LNAs)
• Oscillators
• Mixers
• RF Front-End Modules
• Communication Systems (e.g., cellular, WLAN)

Features

• NPN Silicon Bipolar Transistor
• Low Noise Figure
• High Gain
• High Transition Frequency
• Small Package
• RoHS Compliant

Benefits

• Ensures minimal noise contribution, improving the signal-to-noise ratio in sensitive receiver applications.
• Provides high amplification, enhancing the sensitivity of RF circuits.
• Enables operation at high frequencies, making it suitable for modern communication systems.
• Saves valuable board space, enabling smaller and more compact designs.
• Compliant with environmental regulations.
• Optimized for performance in many common applications

Additional Details

The BFP182E7765 is characterized by its low noise figure and high gain, making it an ideal choice for low-noise amplifier (LNA) applications. Its high transition frequency allows it to be used in high-frequency circuits. The small package minimizes board space requirements. This transistor is designed for optimal performance in RF front-end modules and communication systems.

Technical Specifications:

• Polarity: NPN
• Transition Frequency (fT): Typically specified in GHz.
• Noise Figure (NF): Typically specified in dB.
• Gain: Typically specified in dB.
• Collector Current (Ic): Specified in the datasheet.
• Package: SOT-343