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BSC079N03LSCGATMA1

Part No BSC079N03LSCGATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 14A 8TDSON
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 14A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 19nC @ 10V
Max Input Capacitance 1600pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 30W (Tc)
Maximum Rds On at Id,Vgs 7.9 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TDSON-8
Dimension 8-PowerTDFN
Win Source Part Number 138287-BSC079N03LSCGATMA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BSC079N03LSCGATMA1 CAD Model

Description

Product Description

The BSC079N03LSCGATMA1 MOSFET offers high-reliability in a compact form, boasting impressive specifications for industrial and commercial use. Its efficient design supports robust applications.

Features and Benefits

  • Efficient high-speed operation
  • Enhanced power handling capabilities
  • Very low thermal resistance
  • Compact and robust VSON package

Applications

  • High-efficiency power supply design
  • Motor control systems
  • Inverters
  • Embedded systems

Additional Details: Fully RoHS compliant for environmentally friendly operations.

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Pricing & Ordering

Quantity Unit Price Ext. Price
225+ $0.2606 $58.6350
540+ $0.2139 $115.5060
840+ $0.2072 $174.0480
1,155+ $0.2005 $231.5775
1,490+ $0.1938 $288.7620
1,995+ $0.1737 $346.5315
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 225 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?

Shipping Information

Shipped from HK warehouse
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