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Same model may have multiple batches, images only for reference.
BSL215CL6327HTSA1 Real Image
Same model may have multiple batches, images only for reference.

BSL215CL6327HTSA1

Part No BSL215CL6327HTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V 1.5A TSOP-6
Datasheet
BSL215CL6327HTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.5A
Maximum Rds On at Id,Vgs 140 mOhm @ 1.5A, 4.5V
Gate-Source Threshold Voltage 1.2V @ 3.7μA
Max Gate Charge 0.73nC @ 4.5V
Max Input Capacitance 143pF @ 10V
Maximum Power Dissipation 500mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TSOP6-6
Win Source Part Number 108993-BSL215CL6327HTSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSL215CL6327HTSA1 CAD Model

Description

Description

The BSL215CL6327HTSA1 N-channel MOSFET is designed for applications demanding high efficiency and performance. This component stands out with its excellent heat dissipation properties and reliable operation.

Applications

  • Mobile computing devices
  • Embedded systems
  • Automotive power distribution
  • Industrial control systems

Features and Benefits

  • Superior thermal resistance for enhanced performance
  • Compact and lightweight design
  • High-frequency switching capability
  • Optimized for low energy usage

Additional Details

The advanced architecture of the BSL215CL6327HTSA1 MOSFET ensures efficiency and robustness for a variety of applications. It is a prime choice for developers looking for an energy-efficient and space-saving power management solution.

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