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BSP129E6327

Part No BSP129E6327
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 240V 350MA SOT223
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series SIPMOS
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 240V
Current - Continuous Drain (Id) @ 25°C 350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 0V, 10V
Vgs(th) (Maximum) @ Id 1V @ 108μA
Gate Charge (Qg) (Maximum) @ Vgs 5.7nC @ 5V
Input Capacitance (Ciss) (Maximum) @ Vds 108pF @ 25V
Vgs (Maximum) ±20V
FET Feature Depletion Mode
Power Dissipation (Maximum) 1.8W (Ta)
Rds On (Maximum) @ Id, Vgs 6 Ohm @ 350mA, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package PG-SOT223-4
Package TO-261-4, TO-261AA
Win Source Part Number 770424-BSP129E6327
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BSP129E6327 CAD Model

Description

The Infineon Technologies BSP129E6327 is an obsolete (EOL) electronic component from Infineon Technologies.

  • Series: SIPMOS
  • Status: Obsolete (EOL)
  • Supply and Demand Status: Limited
  • Manufacturer Package: PG-SOT223-4
  • Package: TO-261-4, TO-261AA
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • FET Feature: Depletion Mode
  • Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
  • Channel Type: N
  • Drain Source Voltage: 240V
  • Vgs(th) (Maximum) @ Id: 1V @ 108μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 5.7nC @ 5V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 108pF @ 25V
  • Vgs (Maximum): ±20V
  • Power Dissipation (Maximum): 1.8W (Ta)
  • Rds On (Maximum) @ Id, Vgs: 6 Ohm @ 350mA @ 10V

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