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Same model may have multiple batches, images only for reference.
BSP317PL6327HTSA1 Real Image
Same model may have multiple batches, images only for reference.

BSP317PL6327HTSA1

Part No BSP317PL6327HTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 250V 0.43A SOT-223
Datasheet
BSP317PL6327HTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 430mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 370μA
Max Gate Charge 15.1nC @ 10V
Max Input Capacitance 262pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta)
Maximum Rds On at Id,Vgs 4 Ohm @ 430mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT223-4
Dimension TO-261-4, TO-261AA
Win Source Part Number 1024445-BSP317PL6327HTSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSP317PL6327HTSA1 CAD Model

Description

This electronic component is a MOSFET with Win Source Part Number: 1024445-BSP317PL6327HTSA1.

  • Category: Discrete semiconductor products
  • Drain-Source Breakdown Voltage: 250V
  • Continuous Drain Current @ 25°C: 430mA
  • Maximum Gate Charge @ 10V: 15.1nC
  • Maximum Input Capacitance @ 25V: 262pF

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