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Same model may have multiple batches, images only for reference.
BSS159N E6327 Real Image
Same model may have multiple batches, images only for reference.

BSS159N E6327

Part No BSS159N E6327
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 230MA SOT-23
Datasheet
BSS159N E6327 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 0V, 10V
Gate-Source Threshold Voltage 2.4V @ 26μA
Max Gate Charge 2.9nC @ 5V
Max Input Capacitance 44pF @ 25V
Maximum Gate-Source Voltage ±20V
FET Feature Depletion Mode
Power Dissipation (Max) 360mW (Ta)
Maximum Rds On at Id,Vgs 3.5 Ohm @ 160mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1024507-BSS159N E6327
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BSS159N E6327 CAD Model

Description

The BSS159N E6327 is a depletion-mode MOSFET transistor manufactured by Infineon Technologies.

  • Supply and Demand: Sufficient
  • Application: Low-Power Switching
  • Feature: Low On-Resistance
  • Feature: High Transconductance
  • Operating Temperature: Wide Range
  • Reliability: High
  • Availability: Variety of Packages

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