The FF225R17ME3BOSA1 is a half-bridge inverter configuration insulated gate bipolar transistor (IGBT) module.

• Series: EconoDUAL™ 3
• Power-Max: 1400 W
• IGBT Type: Trench Field Stop
• Voltage Collector Emitter Breakdown (Max): 1700 V
• Current Collector (Ic) (Max): 340 A
• Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 225A
• Current Collector Cutoff (Max): 3 mA
• Input Capacitance (Cies) @ Vce: 20.5 nF @ 25 V
• Thermistor: NTC
• Package: Tray
• Standard Package: 10
• Temperature Range: -40°C to 125°C
• ECCN: EAR99
• MSL Level: 1 (Unlimited)
• REACH: Unaffected
• HTSUS Code: 8541.29.0095
• Manufacturer: Infineon Technologies