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Same model may have multiple batches, images only for reference.
IPA60R380E6XKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPA60R380E6XKSA1

Part No IPA60R380E6XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 10.6A TO220
Datasheet
IPA60R380E6XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 10.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 320μA
Max Gate Charge 32nC @ 10V
Max Input Capacitance 700pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 31W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 3.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-FP
Dimension TO-220-3 Full Pack
Win Source Part Number 068950-IPA60R380E6XKSA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPA60R380E6XKSA1 CAD Model

Description

The IPA60R380E6XKSA1 is a MOSFET from Infineon Technologies. It is a N-channel type device with a maximum continuous drain current of 10.6A (Tc).

  • Voltage Supply: 10V
  • Drain-Source Breakdown Voltage: 600V
  • Power Dissipation: 31W (Tc)
  • Package: PG-TO-220-FP
  • Ideal for: Use in discrete semiconductor products
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Compliance: ECCN EAR99

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8671 $52.0260
125+ $0.8112 $101.4000
195+ $0.7832 $152.7240
275+ $0.7273 $200.0075
360+ $0.6993 $251.7480
450+ $0.6714 $302.1300
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Availability: 18,660 pieces
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