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Same model may have multiple batches, images only for reference.
IPA60R950C6 Real Image
Same model may have multiple batches, images only for reference.

IPA60R950C6

Part No IPA60R950C6
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 4.4A TO220-FP
Datasheet
IPA60R950C6 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 130μA
Max Gate Charge 13nC @ 10V
Max Input Capacitance 280pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 26W (Tc)
Maximum Rds On at Id,Vgs 950 mOhm @ 1.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-FP
Dimension TO-220-3 Full Pack
Win Source Part Number 068955-IPA60R950C6
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPA60R950C6 CAD Model

Description

The IPA60R950C6 is a N-Channel MOSFET manufactured by Infineon Technologies.

  • Supply and Demand Status: Limited
  • Power Dissipation: 26W (Tc)
  • Maximum Rds On at Id, Vgs: 950 mOhm @ 1.5A, 10V
  • Gate-Source Threshold Voltage: 3.5V @ 130μA
  • Maximum Input Capacitance: 280pF @ 100V

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.1435 $62.8925
125+ $0.9379 $117.2375
195+ $0.9090 $177.2550
265+ $0.8790 $232.9350
340+ $0.8501 $289.0340
455+ $0.7623 $346.8465
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 35,000 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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