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IPA80R460CEXKSA2

Part No IPA80R460CEXKSA2
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 10.8A TO220 / N-Channel 800 V 10.8A (Ta) 34W (Tc) Through Hole PG-TO220-3-31
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 10.8A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 460mOhm @ 7.1A, 10V
Vgs(th) (Max) @ Id 3.9V @ 680µA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 100 V
Power Dissipation (Max) 34W (Tc)
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Through Hole
Supplier Device Package PG-TO220-3-31
Case / Package TO-220-3 Full Pack
Base Product Number IPA80R460
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number SP001313396,2156-IPA80R460CEXKSA2,ROCINFIPA80R460CEXKSA2
Standard Package 50
Win Source Part Number 1324350-IPA80R460CEXKSA2
Ultra Librarian 3D Model Ultra Librarian IPA80R460CEXKSA2 CAD Model

Description

The Infineon IPA80R460CEXKSA2 is an N-channel MOSFET transistor designed for use in a range of applications, including power supplies, motor control, and lighting.

  • Drain to Source Voltage: 800V
  • Continuous Drain Current: 10.8A @ 25°C
  • Maximum On-Resistance: 460mOhm @ 7.1A
  • Gate Charge: 64nC @ 10V
  • RoHS3 Compliance: Yes
  • ECCN: EAR99

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.1520 $64.5600
70+ $1.7658 $123.6060
105+ $1.7107 $179.6235
140+ $1.6555 $231.7700
185+ $1.6003 $296.0555
245+ $1.4347 $351.5015
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,220 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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