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IPB010N06N

Part No IPB010N06N
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description New OptiMOS™ 40V and 60V
Sample
Rohs State rohs
ECAD Module
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Manufacturer Infineon Technologies
Win Source Part Number 1186006-IPB010N06N
Manufacturer Homepage www.infineon.com
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Power Management, Alternative Energy, Motor Drive & Control, Industrial
Ultra Librarian 3D Model Ultra Librarian IPB010N06N CAD Model

Description

The IPB010N06N is a medium popularity electronic component manufactured by Infineon Technologies.

  • Application: This MOSFET is suitable for various applications such as power management, alternative energy, motor drive and control, and industrial.
  • Drain-Source Breakdown Voltage: It has a drain-source breakdown voltage of 60V and continuous drain current of 100A.
  • Maximum Power Dissipation: The maximum power dissipation is 83W.
  • Mounting Style: The mounting style is Through Hole and the package is TO-263.
  • Gate-Source Voltage: The gate-source voltage is ±20V and the input capacitance is 1500pF @ 25V.

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $6.0212 $54.1908
21+ $4.9405 $103.7505
32+ $4.7861 $153.1552
44+ $4.6317 $203.7948
56+ $4.4773 $250.7288
75+ $4.0141 $301.0575
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,000 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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