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IPB019N08N3G

Part No IPB019N08N3G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 80V 180A Automotive 7-Pin(6+Tab) D2PAK T/R / OptiMOS3 Power-transistor
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Manufacturer Infineon Technologies
Win Source Part Number 1186008-IPB019N08N3G
Manufacturer Homepage www.infineon.com
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name IPB019N08N3G
Introduction Date January 03, 2009
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian IPB019N08N3G CAD Model

Description

The IPB019N08N3G is a CoolMOS™ Power MOSFET from Infineon Technologies. This N-channel MOSFET is designed for high-efficiency power conversion in a wide range of applications, including synchronous rectification, DC-DC converters, and motor drives. Its low on-resistance and fast switching speed contribute to minimizing power losses and improving overall system performance.

Applications

  • Synchronous Rectification in AC-DC power supplies
  • DC-DC converters
  • Motor drives
  • Battery management systems
  • Uninterruptible Power Supplies (UPS)

Features

  • 80V Drain-Source Voltage (VDS)
  • Ultra-low On-Resistance (RDS(on)) of 1.9 mΩ (typical)
  • Optimized for Synchronous Rectification
  • Very Low Gate Charge (Qg)
  • Avalanche Rated
  • 100% Avalanche Tested
  • Pb-free lead plating; RoHS compliant

Benefits

  • High Efficiency: The extremely low on-resistance minimizes conduction losses, resulting in significantly improved efficiency.
  • Reduced Heat Dissipation: Lower RDS(on) leads to less heat generation, simplifying thermal management.
  • Faster Switching: Very low gate charge enables faster switching speeds, further reducing switching losses.
  • Robust Performance: Avalanche rating and 100% avalanche testing ensure reliable operation under transient conditions.
  • Simplified Design: Optimized for synchronous rectification, simplifying the design process for these applications.

Additional Details

The IPB019N08N3G utilizes Infineon's advanced CoolMOS™ technology, which provides superior performance compared to conventional MOSFETs. This technology enables lower on-resistance, reduced gate charge, and improved switching characteristics. The device is typically available in a TO-263 (D2PAK) package for excellent thermal performance.

Technical Specifications:

  • VDS (Drain-Source Voltage): 80V
  • RDS(on) (On-Resistance): 1.9 mΩ (typical)
  • ID (Drain Current): Consult datasheet for specific value (varies with package and operating conditions)
  • Qg (Gate Charge): Consult datasheet for specific value
  • Package Type: TO-263 (D2PAK)

Always refer to the manufacturer's datasheet for the most accurate and up-to-date specifications and application guidelines before using this product in any design.

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $10.5221 $63.1326
14+ $8.6335 $120.8690
21+ $8.3637 $175.6377
29+ $8.0939 $234.7231
37+ $7.8242 $289.4954
50+ $7.0148 $350.7400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,590 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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