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Same model may have multiple batches, images only for reference.
IPB072N15N3 G Infineon Technologies
Same model may have multiple batches, images only for reference.

IPB072N15N3 G

Part No IPB072N15N3 G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 100A TO263-3
Datasheet
IPB072N15N3 G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 150V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Vgs(th) (Maximum) @ Id 4V @ 270μA
Gate Charge (Qg) (Maximum) @ Vgs 93nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 5470pF @ 75V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 300W (Tc)
Rds On (Maximum) @ Id, Vgs 7.2 mOhm @ 100A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package PG-TO263-3-2
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 760006-IPB072N15N3 G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPB072N15N3 G CAD Model

Description

The IPB072N15N3 G MOSFET transistor from Infineon Technologies is part of the OptiMOS series.

  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Mounting Type: SMD
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8985 $53.9100
120+ $0.8406 $100.8720
185+ $0.8116 $150.1460
270+ $0.7536 $203.4720
350+ $0.7246 $253.6100
435+ $0.6957 $302.6295
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 120,000 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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