The Infineon Technologies IPB100N06S3-03 is an N-channel MOSFET with a drain-source breakdown voltage of 55V and a maximum continuous drain current of 100A @ 25°C.

• Drain-Source Breakdown Voltage: 55V
• Continuous Drain Current: 100A @ 25°C
• Maximum Rds On @ Id,Vgs: 3 mOhm @ 80A, 10V
• Maximum Gate-Source Voltage: ±20V
• Category: discrete semiconductor products
• Power Dissipation: 300W (Tc)
• Gate-Source Threshold Voltage: 4V @ 230μA
• Maximum Gate Charge: 480nC @ 10V
• Maximum Input Capacitance: 21620pF @ 25V
• Operating Temperature Range: -55℃ to 175℃ (TJ)
• Package: PG-TO263-3-2, TO-263-3, D2Pak (2 Leads + Tab), TO-263AB