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Same model may have multiple batches, images only for reference.
IPB320N20N3G
Same model may have multiple batches, images only for reference.

IPB320N20N3G

Part No IPB320N20N3G
Manufacturer Infineon Technologies
Catalog TRANSISTORS
Description MOSFETs N-Ch 200V 34A D2PAK-2 OptiMOS 3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Infineon
Technology Si
Mounting Style SMD/SMT
Package / Case D2PAK-3 (TO-263-3)
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 200 V
Id - Continuous Drain Current 34 A
Rds On - Drain-Source Resistance 28 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 29 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Pd - Power Dissipation 136 W
Channel Mode Enhancement
Tradename OptiMOS
Series OptiMOS 3
Packaging Cut Tape
Packaging MouseReel
Packaging Reel
Configuration Single
Height 4.4 mm
Length 10 mm
Transistor Type 1 N-Channel
Type OptiMOS 3 Power-Transistor
Width 9.25 mm
Brand Infineon Technologies
Forward Transconductance - Min 27 S
Fall Time 4 ns
Product Type MOSFETs
Rise Time 9 ns
Standard Pack Qty 1000
Subcategory Transistors
Typical Turn-Off Delay Time 21 ns
Typical Turn-On Delay Time 11 ns
Ultra Librarian 3D Model Ultra Librarian IPB320N20N3G CAD Model

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