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IPB60R060C7ATMA1

Part No IPB60R060C7ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 35A TO263-3  /  N-Channel 650 V 35A (Tc) 162W (Tc) Surface Mount D2PAK (TO-263)
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™ C7
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 15.9A, 10V
Vgs(th) (Max) @ Id 4V @ 800µA
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2850 pF @ 400 V
Power Dissipation (Max) 162W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number IPB60R060
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001385008,IPB60R060C7ATMA1-ND,IPB60R060C7ATMA1TR,IPB60R060C7ATMA1CT,IPB60R060C7ATMA1DKR
Standard Package 1,000
Win Source Part Number 964220-IPB60R060C7ATMA1
Ultra Librarian 3D Model Ultra Librarian IPB60R060C7ATMA1 CAD Model

Description

The Infineon Technologies IPB60R060C7ATMA1 is a CoolMOS™ C7 series MOSFET discrete semiconductor product with an N-Channel polarity.

  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Temperature Range: -55°C to 150°C (TJ)
  • Manufacturer: Infineon Technologies

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $12.1355 $60.6775
11+ $9.9573 $109.5303
16+ $9.6461 $154.3376
22+ $9.3350 $205.3700
28+ $9.0238 $252.6664
38+ $8.0903 $307.4314
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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