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Same model may have multiple batches, images only for reference.
IPB60R125CP Real Image
Same model may have multiple batches, images only for reference.

IPB60R125CP

Part No IPB60R125CP
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 25A TO263
Datasheet
IPB60R125CP Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 1.1mA
Max Gate Charge 70nC @ 10V
Max Input Capacitance 2500pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 208W (Tc)
Maximum Rds On at Id,Vgs 125 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 017319-IPB60R125CP
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPB60R125CP CAD Model

Description

The Infineon Technologies IPB60R125CP is an N-channel MOSFET component that is designed for use in a range of applications.

  • Manufacturer: Infineon Technologies
  • Win Source Part Number: 017319-IPB60R125CP
  • Popularity: Medium
  • Supply and Demand Status: Limited
  • Power Dissipation: 208W (Tc)
  • Maximum Drain-Source Breakdown Voltage: 600V

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Quantity Unit Price Ext. Price
15+ $3.3796 $50.6940
37+ $2.7731 $102.6047
56+ $2.6864 $150.4384
77+ $2.5997 $200.1769
100+ $2.5131 $251.3100
134+ $2.2531 $301.9154
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Availability: 2,000 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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