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Same model may have multiple batches, images only for reference.
IPB60R250CP Infineon Technologies
Same model may have multiple batches, images only for reference.

IPB60R250CP

Part No IPB60R250CP
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 12A TO263-3
Datasheet
IPB60R250CP Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 440μA
Max Gate Charge 35nC @ 10V
Max Input Capacitance 1200pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 104W (Tc)
Maximum Rds On at Id,Vgs 250 mOhm @ 7.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 068978-IPB60R250CP
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPB60R250CP CAD Model

Description

The Infineon Technologies IPB60R250CP is a N-channel MOSFET with a drain-source breakdown voltage of 650V and a continuous drain current of 12A at 25°C.

  • Maximum Power Dissipation: 104W (Tc)
  • Maximum Rds On: 250 mOhm @ 7.8A, 10V
  • Gate-Source Threshold Voltage: 3.5V @ 440μA
  • Maximum Gate Charge: 35nC @ 10V
  • Maximum Input Capacitance: 1200pF @ 100V
  • Status: Obsolete(EOL)
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: PG-TO263-3-2

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