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IPB80N04S204ATMA2

Part No IPB80N04S204ATMA2
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 80A TO263-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 170nC @ 10V
Max Input Capacitance 5300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 3.4 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 139257-IPB80N04S204ATMA2
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPB80N04S204ATMA2 CAD Model

Description

The Infineon Technologies 139257-IPB80N04S204ATMA2 is an N-Channel MOSFET with a drain-source breakdown voltage of 40V and a continuous drain current of 80A at 25°C.

  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 80A @ 25°C
  • Maximum Rds On: 3.4 mOhm @ 80A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 170nC @ 10V
  • Maximum Input Capacitance: 5300pF @ 25V
  • Package: PG-TO263-3-2
  • Operating Temperature Range: -55°C to 175°C
  • Application: power supplies, motor control, and battery protection circuits

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $3.4694 $58.9798
41+ $2.8466 $116.7106
63+ $2.7577 $173.7351
87+ $2.6687 $232.1769
112+ $2.5798 $288.9376
150+ $2.3129 $346.9350
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,400 pieces
MOQ: 17 pcs
Order Increment : 1 pcs
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