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IPB80N04S2H4ATMA2

Part No IPB80N04S2H4ATMA2
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CHANNEL_30/40V
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 148 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4400 pF @ 25 V
Power Dissipation (Max) 300W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number IPB80N
Standard Package 1,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 874747-IPB80N04S2H4ATMA2
Ultra Librarian 3D Model Ultra Librarian IPB80N04S2H4ATMA2 CAD Model

Description

The 874747-IPB80N04S2H4ATMA2 is a N-Channel MOSFET transistor from Infineon Technologies.

  • Channel Type: N-Channel
  • Series: CoolMOS™
  • Application: discrete semiconductor products
  • Vdss: 40V
  • Id: 80A
  • Rds On (Max): 3.7mOhm @ 80A and 10V
  • Gate Charge (Qg): 148 nC @ 10V
  • Input Capacitance (Ciss): 4400 pF @ 25V
  • Operating Temperature: -55°C to 175°C
  • Mounting Type: Surface mountable
  • Package: TO-263-3, D²Pak
  • Product Status: active

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $8.0722 $56.5054
16+ $6.6233 $105.9728
24+ $6.4164 $153.9936
33+ $6.2094 $204.9102
42+ $6.0024 $252.1008
56+ $5.3815 $301.3640
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,047 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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