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Same model may have multiple batches, images only for reference.
IPB80N04S304ATMA1 Real Image
Same model may have multiple batches, images only for reference.

IPB80N04S304ATMA1

Part No IPB80N04S304ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 80A TO263-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 90μA
Max Gate Charge 80nC @ 10V
Max Input Capacitance 5200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 136W (Tc)
Maximum Rds On at Id,Vgs 3.8 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 133200-IPB80N04S304ATMA1
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian IPB80N04S304ATMA1 CAD Model

Description

The Infineon Technologies IPB80N04S304ATMA1 is an N-channel MOSFET component that is designed for use in a range of applications.

  • Manufacturer: Infineon Technologies
  • Win Source Part Number: 133200-IPB80N04S304ATMA1
  • Popularity: medium-popularity
  • Supply and demand status: limited
  • Reliability: reliable component
  • Power dissipation: 136W (Tc)
  • Drain-source breakdown voltage: 40V

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6320 $65.2800
90+ $1.3398 $120.5820
135+ $1.2982 $175.2570
185+ $1.2555 $232.2675
240+ $1.2139 $291.3360
320+ $1.0880 $348.1600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 17,392 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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