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IPI04N03LA

Part No IPI04N03LA
Manufacturer Infineon Technologies
Catalog FETs - Single
Description OptiMOS 2 Power-Transistor | MOSFET N-CH 25V 80A TO-262
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 25V
Id - Continuous Drain Current 80A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 4.2mOhm at 55A, 10V
Gate Source Voltage(th) (Maximum) at Id 2V at 60μA
Gate Charge (Qg) (Maximum) at Vgs 32nC at 5V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 3877pF at 15V
Power Dissipation (Maximum) 107W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package PG-TO262-3
Manufacturer Package TO-262-3 Long Leads, I2Pak, TO-262AA
Manufacturer Pack Quantity 500
MSL Level 1 (Unlimited)
Win Source Part Number 724023-IPI04N03LA
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPI04N03LA CAD Model

Description

The Infineon Technologies IPI04N03LA is a N-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current: 80A
  • Rds On @ Id, Vgs: 4.2mOhm @ 55A, 10V
  • Gate-Source Voltage(th) (Maximum) @ Id: 2V @ 60μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 32nC @ 5V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 3877pF @ 15V
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Mounting: Through hole

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